Author: Hannon, F.E.
Paper Title Page
MOP054 Fabrication of 3.0-GHz Single-cell Cavities for Thin-film Study 177
  • T. Saeki, H. Hayano, H. Inoue, R. Katayama, T. Kubo
    KEK, Ibaraki, Japan
  • F.E. Hannon, R.A. Rimmer, A-M. Valente-Feliciano
    JLab, Newport News, Virginia, USA
  • H. Ito
    Sokendai, Ibaraki, Japan
  • Y. Iwashita, H. Tongu
    Kyoto ICR, Uji, Kyoto, Japan
  Funding: This work is supported by JSPS KAKENHI JP17H04839, JSPS KAKENHI JP26600142, Japan-US Research Collaboration Program, and the Collaborative Research Program of ICR Kyoto Univ. (2018-13).
We fabricated 3.0-GHz single-cell cavities with Cu and Nb materials for testing thin-film creations on the inner surface of the cavities in collaboration between Jefferson Laboratory (JLab) and KEK. The cavity was designed at JLab. According to the design of cavity, the press-forming dies and trimming fixtures for the cavity-cell were also designed and fabricated at JLab. These dies and trimming fixtures were transported to KEK, and the rest of fabrication processes were done at KEK. Finally nine Cu 3.0-GHz single-cell cavities and six Nb 3.0-GHz single-cell cavities were fabricated. Two Cu 3.0-GHz single-cell cavities were mechanically polished at Jlab. All of these cavities will be utilized for the tests of various thin-film creations at JLab and KEK. This presentation describes details of the fabrication of these cavities.
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About • paper received ※ 05 July 2019       paper accepted ※ 13 August 2019       issue date ※ 14 August 2019  
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